The discovery of a pioneering silicon gate technology by Robert E. Kerwin
Kerwin earned his SM degree in Chemistry from MIT in 1958.
The discovery of a pioneering silicon gate technology by Robert E. Kerwin (SM ’58), leading to Intel’s growth and success, can be traced back to two young Irish emigrants arriving in the U.S. at the turn of the twentieth century
Kerwin was raised in Quincy, Massachusetts attending the Massachusetts Fields School, and North Quincy High School. In 1954, he earned a Bachelor of Science from Boston College and was awarded a Master of Science from MIT in 1958. In 1964, Bob completed a PhD in Chemistry at the University of Pittsburgh, serving as a Junior Fellow in Polymer Science at the Mellon Institute. At that time, Kerwin joined AT&T’s Bell Telephone Laboratories as a Member of Technical Staff in the Electronic Component Processes Laboratory in Murray Hill, New Jersey.
